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FDB86102LZ

Manufacturer:

On Semiconductor

Mfr.Part #:

FDB86102LZ

Datasheet:
Description:

MOSFETs TO-263 SMD/SMT N-Channel number of channels:1 3.1 W 100 V Continuous Drain Current (ID):8.3 A 21 nC

ParameterValue
Length10.67 mm
Width11.33 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Height4.83 mm
PackagingReel
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Weight1.31247 g
Number of Elements1
Lifecycle StatusProduction (Last Updated: 5 months ago)
Max Power Dissipation2 W
Power Dissipation3.1 W
Threshold Voltage1.5 V
Number of Channels1
Input capacitance1.275 nF
Continuous Drain Current (ID)8.3 A
Rds On Max24 mΩ
Drain to Source Voltage (Vdss)100 V
Turn-On Delay Time6.6 ns
Turn-Off Delay Time18.2 ns
Element ConfigurationSingle
Rise Time2.1 ns
Gate Charge21 nC
Drain to Source Resistance24 mΩ
Nominal Vgs1.5 V
Gate to Source Voltage (Vgs)-20 V, 20 V
Drain to Source Breakdown Voltage (Vds)100 V
Schedule B8541290080
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 months ago)
Gate to Source Threshold Voltage1 V
FET Type(Transistor Polarity)N-Channel

Stock: 1

Distributors
pcbx
Unit Price$1.12109
Ext.Price$1.12109
QtyUnit PriceExt.Price
1$1.12109$1.12109
10$1.09642$10.96420
25$1.08945$27.23625
50$1.08252$54.12600
100$1.07563$107.56300